K2611 TRANSISTOR TOSHIBA 2SK2611 900V N-CH MOSFET TO-3P

K2611 TRANSISTOR TOSHIBA 2SK2611 900V N CH MOSFET TO 3P

Rs: 500 /- PKR
Availability: 1
Brand: Circuit PK
Product SKU: CKT-2380
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Sepcifications

Absolute Maximum Ratings

1. Drain−source voltage : VDSS = 900 V

2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 900 V

3. Gate−source voltage : VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C) : PD = 150 W

5. Single pulse avalanche energy : EAS = 663 mJ

6. Avalanche current : IAR = 9 A

7. Repetitive avalanche energy : EAR = 15 mJ

This K2611 N-Channel enhancement mode power field effect transistors are produced using Winsemi’s

proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to

minimize on-state resistance , provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

switch mode power supplies.

Super Administrator 29/07/2015

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